占“新”为民 兴“材”报国：王占国院士文集
作者：中国科学院半导体研究所 编
出版时间：2018年版
内容简介
《占“新”为民 兴“材”报国——王占国院士文集》梳理和总结了中国科学院院士、半导体材料及材料物理学家王占国院士近60年从事半导体材料领域科研活动的历程。主要包括王占国院士生活和工作的珍贵照片、有代表性的研究论文、科研和工作事迹、回忆文章、获授奖项以及育人情况等内容。王占国院士是我国著名的半导体材料及材料物理学家，对推动我国半导体材料科学领域的学术繁荣、学科发展、技术创新、产业振兴以及人才培养做出了重要贡献。
目录
目录
序
第一篇 自传
幼年时光 3
插曲 7
初入小学 8
远足与讲演 10
夜“逃”红军 11
崭新的小学生活 12
侯集镇的3 年初中生活 14
夜惊 15
雪夜宿房营 16
入伙 18
紧张有趣的课外活动 19
南阳第二高中 20
只身北上南开求学 23
胆战心惊的高等数学课 26
共产主义暑假 27
毛主席视察南开大学 28
3 年困难时期的大学生活 29
早期科研工作概述 33
什刹海黑夜救同事 37
天津小站劳动锻炼 38
1978 年中国物理学会年会趣事 40
变温霍尔系数测量系统建设 41
留学瑞典隆德大学固体物理系 42
1984 年回国后的研究工作 45
第二篇 论著选编
硅的低温电学性质 49
Evidence that the gold donor and acceptor in silicon are two levels of the same defect 57
Optical properties of iron doped AlxGa1-xAs alloys 62
Electronic properties of native deep-level defects in liquid-phase epitaxial GaAs 73
Direct evidence for random-alloy splitting of Cu levels in GaAs1-xPx 89
Acceptor associates and bound excitons in GaAs：Cu 95
Localization of excitons to Cu-related defects in GaAs 116
Direct evidence for the acceptorlike character of the Cu-related C and F bound-exciton centers in GaAs 128
混晶半导体中深能级的展宽及其有关效应 140
Electronic properties of an electron-attractive complex neutral defect in GaAs 151
硅中金施主和受主光电性质的系统研究 158
A novel model of “new donors” in Czochralski-grown silicon 169
Electrical characteristics of GaAs grown from the melt in a reduced-gravity environment 177
SI-GaAs 单晶热稳定性及其电学补偿机理研究 185
Interface roughness scattering in GaAs-AlGaAs modulation-doped heterostructures 195
Simulation of lateral confinement in very narrow channels 201
Theoretical investigation of the dynamic process of the illumination of GaAs 209
Effect of image forces on electrons confined in low-dimensional structures under a magnetic field 222
Photoluminescence studies of single submonolayer InAs structures grown on GaAs(001)matrix 234
Influence of DX centers in the Alx Ga1-x As barrier on the low-temperature density and mobility of the two-dimensional electron gas in GaAs / AlGaAs modulation-doped heterostructure 240
Photoluminescence studies on very high-density quasi-two-dimensional electron gases in pseudomorphic modulation-doped quantum wells 247
Ordering along ？111？ and ？100？ directions in GaInP demonstrated by photoluminescence under hydrostatic pressure 252
Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer 259
Electrical properties of semi-insulating GaAs grown from the melt under microgravity conditions 264
808nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice 269
Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs 275
半导体材料的现状和发展趋势 283
Effects of annealing on self-organized InAs quantum islands on GaAs(100) 285
Wurtzite GaN epitaxial growth on a Si(001)substrate using γ-Al2O3 as an intermediate layer 291
High-density InAs nanowires realized in situ on(100)InP 298
High power continuous-wave operation of self-organized In(Ga)As / GaAs quantum dot lasers 304
Quantum-dot superluminescent diode： A proposal for an ultra-wide output spectrum 306
Optical properties of InAs self-organized quantum dots in n-i-p-i GaAs superlattices 317
High-performance strain-compensated InGaAs / InAlAs quantum cascade lasers 322
Research and development of electronic and optoelectronic materials in China 328
半导体量子点激光器研究进展 339
High-power and long-lifetime InAs / GaAs quantum-dot laser at 1080nm 349
Self-assembled quantum dots， wires and quantum-dot lasers 355
Controllable growth of semiconductor nanometer structures 365
Effect of In0. 2Ga0. 8As and In0. 2Al0. 8As combination layer on band offsets of InAs quantum dots 372
信息功能材料的研究现状和发展趋势 380
High-performance quantum-dot superluminescent diodes 395
Time dependence of wet oxidized AlGaAs / GaAs distributed Bragg reflectors 400
Materials science in semiconductor processing 407
半导体照明将触发照明光源的革命 409
Study of the wetting layer of InAs / GaAs nanorings grown by droplet epitaxy 415
Broadband external cavity tunable quantum dot lasers with low injection current density 422
Experimental investigation of wavelength-selective optical feedback for a high-power quantum dot superluminescent device with two-section structure 432
19μm quantum cascade infrared photodetectors 442
High-performance operation of distributed feedback terahertz quantum cascade lasers 450
Efficacious engineering on charge extraction for realizing highly efficient perovskite solar cells 456
Room temperature continuous wave quantum dot cascade laser emitting at 7.2μm 474
第三篇 学术贡献
忍受辐照伤痛，换来我国空间用硅太阳电池的定型投产 489
挑战国际权威，澄清GaAs 和硅中深能级物理本质 491
“863”十年，掌舵我国新型半导体材料与器件发展 494
任“S-863”专家组长，开展新材料领域战略研究 498
任咨询组组长，为“973”材料领域发展做出重要贡献 499
开拓创新，解决“信息功能材料相关基础问题” 501
推动材料基础研究，实施光电信息功能材料重大研究计划 503
第四篇 回忆
半导体材料科学实验室的筹建与初期发展历程回顾 507
深情厚谊，历久弥坚 509
王占国院士科研事迹回顾 511
一段往事 514
王占国院士支持南昌大学GaN 研究记事 515
我生命中的贵人 517
贺王占国老师80 寿辰 519
往事点滴 521
在王占国导师身边的日子 523
我们的大导师王占国院士 526
我眼中的王占国院士 528
德高望重，仰之弥高 529
超宽禁带半导体材料研究组发展
